Understanding interfacial recombination
Today, the opto-electronic quality of neat perovskite layers can be essentially pushed to it’s radiative limit, however the open-circuit voltage of perovskite solar cells remains limited by significant non-radiative recombination. In particular for pin-type cells, the losses at the top interface to C60 – a common electron transport layer – appears to be omnipresent and typically 1-2 orders of magnitudes larger than all recombination in the perovskite absorber layer. Despite this, interfacial recombination remains poorly understood as much research efforts were targeted at improving the bulk quality and the passivation of electronic defects on the surface. The PotsdamPero group aims at unravelling the processes that govern interfacial recombination with particular focus on understanding the interfacial recombination pathway, the energy level alignmentP4 at the interface, the working mechanism of interlayers, and the presence of back-surface fields which can reduce interfacial recombination.
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